I-IKW75N65EH5XKSA1 IGBT Transistors INDUSTRY 14

Inkcazelo emfutshane:

Abavelisi: Infineon Technologies
Udidi lweMveliso: IiTransistors – IGBTs – Single
Ishiti yedatha:I-IKW75N65EH5XKSA1
inkcazelo: IGBT TRENCH 650V 90A TO247-3
Ubume be-RoHS: Iyahambelana ne-RoHS


Iinkcukacha zeMveliso

Iimbonakalo

Usetyenziso

Iithegi zeMveliso

♠ Inkcazo yeMveliso

Uphawu lweMveliso Ixabiso lophawu
Umenzi: Infineon
Udidi lweMveliso: IGBT Transistors
Itekhnoloji: Si
Umqulu / Ityala: UKUYA-247-3
Isimbo sokuNqamisa: NgeHole
Ubumbeko: Ungatshatanga
Umqokeleli- Emitter Voltage VCEO Max: 650 V
Umqokeleli-Emitter Saturation Voltage: 1.65 V
Ubuninzi beSango leEmitter Voltage: 20 V
UMqokeleli oqhubekayo ngoku kwi-25 C: 90 A
I-Pd - Ukutshatyalaliswa kwamandla: 395 W
Ubuncinci bobushushu bokusebenza: - 40 C
Obona bushushu bokusebenza: + 175 C
Uthotho: Trenchstop IGBT5
Ukupakishwa: Umbhobho
Uphawu: I-Infineon Technologies
I-Gate-Emitter Leakage yangoku: 100 nA
Ubude: 20.7 mm
Ubude: 15.87 mm
Uhlobo lweMveliso: IGBT Transistors
Ubungakanani bePakethi yoMzi-mveliso: 240
Uluhlu olungaphantsi: Ii-IGBTs
Igama loRhwebo: I-TRENCHSTOP
Ububanzi: 5.31 mm
Inxalenye # Izifakelo: IKW75N65EH5 SP001257948
Ubunzima beyunithi: 0.211644 oz

 


  • Ngaphambili:
  • Okulandelayo:

  • HighspeedH5technologyoffering
    •Olona didi lusebenzayo ekutshintsheni nzima kunye ne-resonant topolologis
    •I-Plugandplay endaweni yee-GBT zesizukulwana sangaphambili
    •650Vbreakdownvoltage
    •Intlawulo ephantsiQG
    •IGBTcopacked withfull-ratedRAPID1fastandsoftantiparallel diode
    Obona bushushu buphezulu175°C
    •Ifanelekile ngokweJEDECfortargetapplications
    •Pb-freeleadplating;I-RoHS iyahambelana
    •Iimodeli zeproductrumandPSpiceModels ezigqibeleleyo: http://www.infineon.com/igbt/

    •Amandla angenakuphazamiseka
    •Iziguquli zelanga
    •IiWeldingconverters
    •Midtohighrangeswitchingfrequencyconverters

    Iimveliso ezinxulumeneyo