I-IKW50N65EH5XKSA1 IGBT Transistors INDUSTRY 14
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Infineon |
| Udidi lweMveliso: | IGBT Transistors |
| Itekhnoloji: | Si |
| Umqulu / Ityala: | UKUYA-247-3 |
| Isimbo sokuNqamisa: | NgeHole |
| Ubumbeko: | Ungatshatanga |
| Umqokeleli- Emitter Voltage VCEO Max: | 650 V |
| Umqokeleli-Emitter Saturation Voltage: | 1.65 V |
| Ubuninzi beSango leEmitter Voltage: | 20 V |
| UMqokeleli oqhubekayo ngoku kwi-25 C: | 80 A |
| I-Pd - Ukutshatyalaliswa kwamandla: | 275 W |
| Ubuncinci bobushushu bokusebenza: | - 40 C |
| Obona bushushu bokusebenza: | + 175 C |
| Uthotho: | Trenchstop IGBT5 |
| Ukupakishwa: | Umbhobho |
| Uphawu: | I-Infineon Technologies |
| I-Gate-Emitter Leakage yangoku: | 100 nA |
| Ubude: | 20.7 mm |
| Ubude: | 15.87 mm |
| Uhlobo lweMveliso: | IGBT Transistors |
| Ubungakanani bePakethi yoMzi-mveliso: | 240 |
| Uluhlu olungaphantsi: | Ii-IGBTs |
| Igama loRhwebo: | I-TRENCHSTOP |
| Ububanzi: | 5.31 mm |
| Inxalenye # Izifakelo: | IKW50N65EH5 SP001257944 |
| Ubunzima beyunithi: | 0.213383 oz |
HighspeedH5technologyoffering
•Olona didi lusebenzayo ekutshintsheni nzima kunye ne-resonant topolologis
•I-Plugandplay endaweni yee-GBT zesizukulwana sangaphambili
•650Vbreakdownvoltage
•Intlawulo ephantsiQG
•IGBTcopacked withfull-ratedRAPID1fastandsoftantiparallel diode
Obona bushushu buphezulu175°C
•Ifanelekile ngokweJEDECfortargetapplications
•Pb-freeleadplating;I-RoHS iyahambelana
•Iimodeli zeproductrumandPSpiceModels ezigqibeleleyo: http://www.infineon.com/igbt/
•Amandla angenakuphazamiseka
•Iziguquli zelanga
•IiWeldingconverters
•Midtohighrangeswitchingfrequencyconverters
