VNB35NV04TR-E Ii-ICs zoTshintsho lwaMandla – Ukusasazwa koMbane N-Ch 70V 35A OmniFET
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | I-STMicroelectronics |
| Udidi lweMveliso: | Ukutshintsha Amandla e-ICs - Ukuhanjiswa kwamandla |
| Uhlobo: | Icala Eliphantsi |
| Inani leZiphumo: | 1 Isiphumo |
| Umda wangoku: | 30 A |
| Ekuchaseni - Max: | 13 mohms |
| Ngexesha - Max: | 500 ns |
| Ixesha Elingasebenziyo - Ubuninzi: | 3 thina |
| Umbane woNikezelo oSebenzayo: | 24 V |
| Ubuncinci bobushushu bokusebenza: | - 40 C |
| Obona bushushu bokusebenza: | + 150 C |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu / Ityala: | D2PAK-2 |
| Uthotho: | I-VNB35NV04-E |
| Isiqinisekiso: | I-AEC-Q100 |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | I-STMicroelectronics |
| Ukungevani kukufuma: | Ewe |
| I-Pd - Ukutshatyalaliswa kwamandla: | 125 W |
| Imveliso: | Ukulayisha Ukutshintsha |
| Uhlobo lweMveliso: | Ukutshintsha Amandla e-ICs - Ukuhanjiswa kwamandla |
| Ubungakanani bePakethi yoMzi-mveliso: | 1000 |
| Uluhlu olungaphantsi: | Tshintshela ii-ICs |
| Ubunzima beyunithi: | 0.066315 oz |
♠ I-OMNIFET II: I-MOSFET yaMandla ekhuselwe ngokupheleleyo
I-VNB35NV04-E, i-VNP35NV04-E kunye ne-VNV35NV04-E zixhobo ze-monolithic ezenziwe kwi-STMicroelectronics® VIPower® M0-3 Technology, ezihloselwe ukutshintshwa kwee-MosFET zamandla aqhelekileyo ukusuka kwi-DC ukuya kwi-25 kHz izicelo.
Ukuvalwa kwe-thermal eyakhelwe-ngaphakathi, umda okhoyo ngoku kunye ne-clamp overvoltage ikhusela i-chip kwiindawo ezinzima.Ingxelo ephosakeleyo inokubonwa ngokubeka iliso kwi-voltage kwi-pin yokufaka.
• Unyino lwangoku lomgca
• Ukuvalwa kobushushu
• Ukukhuselwa kwesiphaluka esifutshane
• Ibamba elidibeneyo
• Umsinga osezantsi uzotywe kwi-pin yongeniso
• Ingxelo yokuxilonga nge-input pin
• Ukhuseleko lwe-ESD
• Ukufikelela ngokuthe ngqo kwisango le-Power MOSFET (ukuqhuba kwe-analog)
• Iyahambelana ne-MosFET yaMandla esemgangathweni
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