SI7461DP-T1-GE3 MOSFET -60V Vds 20V Vgs PowerPAK SO-8
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Vishay |
| Udidi lweMveliso: | I-MOSFET |
| RoHS: | Iinkcukacha |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu/Ityala: | I-SOIC-8 |
| I-Transistor Polarity: | IP-Channel |
| Inani lamatshaneli: | Ijelo eli-1 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 30 V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 5.7 A |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 42 mohms |
| I-Vgs - i-Gate-Source Voltage: | - 10 V, + 10 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 1 V |
| Qg - Intlawulo yeSango: | 24 nC |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 150 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 2.5 W |
| Indlela yesitishi: | Uphuculo |
| Igama loRhwebo: | TrenchFET |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | Vishay Semiconductors |
| Ubumbeko: | Ungatshatanga |
| Ixesha Lokuwa: | 30 ns |
| ITransconductance Phambili - Min: | 13 S |
| Uhlobo lweMveliso: | I-MOSFET |
| Ixesha lokunyuka: | 42 ns |
| Uthotho: | SI9 |
| Ubungakanani bePakethi yoMzi-mveliso: | 2500 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Uhlobo lweTransistor: | I-1 ye-P-Channel |
| Ixesha Elilibazisekayo LokuCima: | 30 ns |
| Ixesha Elilibazisekayo LokuLayita: | 14 ns |
| Inxalenye # Izifakelo: | SI9435BDY-E3 |
| Ubunzima beyunithi: | 750 mg |
• I-TrenchFET® yamandla eMOSFETs
• Iphakheji ephantsi ye-thermal PowerPAK® eneprofayiliEC ye-1.07 mm ephantsi
