SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
♠ Inkcazo yeMveliso
Uphawu lweMveliso | Ixabiso lophawu |
Umenzi: | Vishay |
Udidi lweMveliso: | I-MOSFET |
RoHS: | Iinkcukacha |
Itekhnoloji: | Si |
Isimbo sokuNqamisa: | SMD/SMT |
Umqulu/Ityala: | SC-89-6 |
I-Transistor Polarity: | I-N-Channel, i-P-Channel |
Inani lamatshaneli: | Ijelo eli-2 |
I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 60V |
I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 500 mA |
I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 1.4 Ohms, 4 Ohms |
I-Vgs - i-Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - iSango-Umthombo woMbane woMbane: | 1 V |
Qg - Intlawulo yeSango: | 750 pC, 1.7 nC |
Ubuncinci bobushushu bokusebenza: | - 55 C |
Obona bushushu bokusebenza: | + 150 C |
I-Pd - Ukutshatyalaliswa kwamandla: | 280 mW |
Indlela yesitishi: | Uphuculo |
Igama loRhwebo: | TrenchFET |
Ukupakishwa: | I-Reel |
Ukupakishwa: | Sika iTape |
Ukupakishwa: | MouseReel |
Uphawu: | Vishay Semiconductors |
Ubumbeko: | Zimbini |
ITransconductance Phambili - Min: | 200 mS, 100 mS |
Ubude: | 0.6 mm |
Ubude: | 1.66 mm |
Uhlobo lweMveliso: | I-MOSFET |
Uthotho: | SI1 |
Ubungakanani bePakethi yoMzi-mveliso: | 3000 |
Uluhlu olungaphantsi: | Ii-MOSFETs |
Uhlobo lweTransistor: | I-1 N-Channel, i-1 ye-P-Channel |
Ixesha Elilibazisekayo LokuCima: | 20 ns, 35 ns |
Ixesha Elilibazisekayo LokuLayita: | 15 ns, 20 ns |
Ububanzi: | 1.2 mm |
Inxalenye # Izifakelo: | SI1029X-GE3 |
Ubunzima beyunithi: | 32 mg |
• I-Halogen-free Ngokwe-IEC 61249-2-21 Inkcazo
• I-TrenchFET® Power MOSFETs
• Inyathelo eliNcinci kakhulu
• Ukutshintsha kwecala eliphezulu
• Ukuxhathisa okuphantsi:
N-Channel, 1.40 Ω
IP-Channel, 4 Ω
• Umyinge oPhantsi: ± 2 V (uhlobo.)
• Isantya sokutshintsha ngokukhawuleza: 15 ns (uchwethezo.)
• ISango-Umthombo we-ESD eKhuselweyo: 2000 V
• Ukuthobela i-RoHS Directive 2002/95/EC
• Faka endaweni yeDigital Transistor, Level-Shifter
• Iinkqubo eziSebenza ngebhetri
• IiSekethe zokuGuqulela uBonelelo lwaMandla