IPD50N04S4-10 MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Infineon |
| Udidi lweMveliso: | I-MOSFET |
| RoHS: | Iinkcukacha |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu/Ityala: | UKUYA-252-3 |
| I-Transistor Polarity: | N-Channel |
| Inani lamatshaneli: | Ijelo eli-1 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 40 V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 50 A |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 9.3 mOhms |
| I-Vgs - i-Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 3 V |
| Qg - Intlawulo yeSango: | 18.2 nC |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 175 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 41 W |
| Indlela yesitishi: | Uphuculo |
| Isiqinisekiso: | I-AEC-Q101 |
| Igama loRhwebo: | I-OptiMOS |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Uphawu: | I-Infineon Technologies |
| Ubumbeko: | Ungatshatanga |
| Ixesha Lokuwa: | 5 ns |
| Ubude: | 2.3 mm |
| Ubude: | 6.5 mm |
| Uhlobo lweMveliso: | I-MOSFET |
| Ixesha lokunyuka: | 7ns |
| Uthotho: | I-OptiMOS-T2 |
| Ubungakanani bePakethi yoMzi-mveliso: | 2500 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Uhlobo lweTransistor: | I-1 N-Channel |
| Ixesha Elilibazisekayo LokuCima: | 4 ns |
| Ixesha Elilibazisekayo LokuLayita: | 5 ns |
| Ububanzi: | 6.22 mm |
| Inxalenye # Izifakelo: | IPD5N4S41XT SP000711466 IPD50N04S410ATMA1 |
| Ubunzima beyunithi: | 330 mg |
• Ijelo le-N – Imo yophuculo
• I-AEC iphumelele
• I-MSL1 ukuya kuma-260°C incopho yokuqukuqela kwakhona
• I-175 ° C iqondo lokushisa lokusebenza
• Imveliso yohlaza (ihambelana neRoHS)
• 100% iAvalanche ivavanyiwe
