FDV301N MOSFET N-Ch Digital
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | bonke |
| Udidi lweMveliso: | I-MOSFET |
| RoHS: | Iinkcukacha |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu / Ityala: | I-SOT-23-3 |
| I-Transistor Polarity: | N-Channel |
| Inani lamatshaneli: | Ijelo eli-1 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 25 V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 220 mA |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 5 ohm |
| I-Vgs - i-Gate-Source Voltage: | - 8 V, + 8 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 700 mV |
| Qg - Intlawulo yeSango: | 700 pC |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 150 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 350 mW |
| Indlela yesitishi: | Uphuculo |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | ukuqala / Fairchild |
| Ubumbeko: | Ungatshatanga |
| Ixesha Lokuwa: | 6ns |
| ITransconductance Phambili - Min: | 0.2 S |
| Ubude: | 1.2 mm |
| Ubude: | 2.9 mm |
| Imveliso: | Umqondiso omncinci we-MOSFET |
| Uhlobo lweMveliso: | I-MOSFET |
| Ixesha lokunyuka: | 6ns |
| Uthotho: | FDV301N |
| Ubungakanani bePakethi yoMzi-mveliso: | 3000 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Uhlobo lweTransistor: | I-1 N-Channel |
| Uhlobo: | FET |
| Ixesha Elilibazisekayo LokuCima: | 3.5 ns |
| Ixesha Elilibazisekayo LokuLayita: | 3.2 ns |
| Ububanzi: | 1.3 mm |
| Inxalenye # Izifakelo: | FDV301N_NL |
| Ubunzima beyunithi: | 0.000282 oz |
♠ Digital FET, N-Channel FDV301N, FDV301N-F169
Le N−Channel logic level level yophuculo inkalo yempembelelo transistor iveliswa kusetyenziswa i-osemi's proprietary, high cell density, DMOS technology.Le nkqubo yoxinaniso iphezulu kakhulu ilungiselelwe ukunciphisa ukuxhathisa kurhulumente.Esi sixhobo siyilelwe ngokukodwa usetyenziso lwevoltheji ephantsi njengokutshintsha kweetransistors zedijithali.Ekubeni izichasi ze-bias zingafuneki, le N−channel FET inye inokutshintsha iitransistors ezininzi ezahlukeneyo zedijithali, ezinexabiso elahlukileyo lokuchasa.
• 25 V, 0.22 A Continuous, 0.5 A Peak
♦ RDS(kwi) = 5 @ VGS = 2.7 V
♦ RDS(kwi) = 4 @ VGS = 4.5 V
• IiMfuno zeNqanaba eliPhantsi kakhulu leSango eliVumela ukuSebenza ngokuthe ngqo kwiiSekethe ezi-3 V.VGS(th) <1.06 V
• I-Gate−Source Zener ye-ESD Ruggedness.> 6 kV uMzekelo woMzimba woMntu
• Tshintsha ii-NPN Digital Transistors nge-DMOS FET enye
• Esi sixhobo si-Pb−Simahala kwaye asiMasisi iHalide
