BQ25611DRTWR Ulawulo lwebhetri I2C elawulwa 1-cell 3-A buck itshaja yebhetri kunye nokuchongwa USB kunye 1.2-A ukunyusa ukusebenza 24-WQFN -40 ukuya 85
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Texas Instruments |
| Udidi lweMveliso: | Ulawulo lwebhetri |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Uphawu: | Texas Instruments |
| Ukungevani kukufuma: | Ewe |
| Uhlobo lweMveliso: | Ulawulo lwebhetri |
| Ubungakanani bePakethi yoMzi-mveliso: | 3000 |
| Uluhlu olungaphantsi: | I-PMIC - ii-ICs zoLawulo lwaMandla |
♠ I-BQ25611D I2C eLawulwa yi-1-Cell 3.0-A Itshaja yeBattery yeBuck enoFundo lwe-USB kunye ne-1.2-A Boost Operation
I-BQ25611D yinkqubo edibeneyo yokulawula ibhetri ye-3-A yokutshintsha ibhetri kunye nesixhobo sokulawula indlela yamandla kwiseli enye ye-Li-Ion kunye ne-Lipolymer ibhetri.Isisombululo sidityaniswe kakhulu ne-input reverse-blocking FET (RBFET, Q1), i-highside switching FET (HSFET, Q2), i-FET yecala elisezantsi (LSFET, Q3), kunye ne-FET yebhetri (BATFET, Q4) phakathi kwenkqubo kunye nebhetri.Indlela yombane ephantsi yombane iphucula ukusebenza kwemowudi yokutshintsha, inciphisa ixesha lokutshaja ibhetri kwaye yandise ixesha lokuqhuba kwebhetri ngexesha lesigaba sokukhupha.
I-BQ25611D idityaniswe kakhulu i-3-A yolawulo lwentlawulo yebhetri ye-switchmode kunye nenkqubo yokulawula iNdlela yaMandla yesixhobo se-Li-ion kunye ne-Li-polymer ibhetri.Ifaka ukutshaja okukhawulezayo kunye nenkxaso yombane ophezulu wokufakwa kuluhlu olubanzi lwezicelo ezibandakanya ii-smartphones kunye neetafile.Indlela yayo yamandla ephantsi yokuthintela iphucula ukusebenza kwemowudi yokutshintsha, inciphisa ixesha lokutshaja ibhetri, kwaye yandisa ixesha lokubaleka kwebhetri ngexesha lesigaba sokukhupha.Igalelo layo lombane kunye nommiselo wangoku kunye ne-remote sensing yebhetri ihambisa amandla aphezulu okutshaja kwibhetri.
• Ukusebenza okuphezulu, i-1.5-MHz, i-synchronous switchmode buck tshaja
- I-92% yentlawulo esebenzayo kwi-2-A ukusuka kwi-5-V igalelo
– ± 0.4% ukulawulwa kwamandla ombane kunye nenyathelo le-10-mV
– Programmable JEITA imibundu
-Ukuva ibhetri ukude ukutshaja ngokukhawuleza
• Inkxaso ye-USB On-The-Go (OTG) enemveliso ehlengahlengiswayo ukusuka kwi-4.6 V ukuya kwi-5.15 V
-Yandisa isiguquli ukuya kuthi ga kwi-1.2-A imveliso
-I-92% yokunyusa ukusebenza kakuhle kwimveliso ye-1-A
– Umda ochanekileyo oqhubekayo wangoku (CC).
-Isiqalo esithambileyo ukuya kuthi ga kwi-500-µF yomthwalo we-capacitive
• Igalelo elinye elixhasa igalelo le-USB, iadaptha enevoltage ephezulu, okanye amandla angenazingcingo
-Inkxaso ye-4-V ukuya kwi-13.5-V igalelo loluhlu lwamandla ombane kunye ne-22-V eyona nto iphezulu yokulinganisa igalelo
-I-130-ns igalelo lokucima ngokukhawuleza phezu kokhuseleko lombane
-Umda okhoyo wokucwangcisa igalelo (IINDPM) kunye ne-I
I-2C (100-mA ukuya ku-3.2-A, 100-mA/step)
-I-VINDPM threshold ukuya kuthi ga kwi-5.4-V ilandelela ngokuzenzekelayo umbane webhetri kumandla aphezulu
-Zibonele ngokuzenzekelayo i-USB SDP, iCDP, iDCP kunye neeadaptha ezingeyomfuneko
• Ulawulo lwendlela yombane emxinwa yeVDC (NVDC).
-Ukusebenza ngoko nangoko ngaphandle kwebhetri okanye ibhetri ekhutshwe ngokunzulu
• I-RDSON ephantsi 19.5-mΩ BATFET yokunciphisa ilahleko yokutshaja kunye nokwandisa ixesha lokuqhuba kwebhetri
-Ulawulo lwe-BATFET lwemowudi yenqanawa, kunye nenkqubo epheleleyo yokusetha ngokutsha kunye nangaphandle kweadaptha
• 7-µIbhetri ephantsi evuza ngoku kwimo yenqanawa
• 9.5-µIbhetri ephantsi evuzayo ngoku nenkqubo yokulinda
• Iprofayile yokutshaja ibhetri echanekileyo
- ± 6% ummiselo okhoyo ngoku
– ± 7.5% igalelo lommiselo wangoku
– ± 3% umgaqo wombane we-VINDPM
-Ixesha elinocwangciso lokutshaja ibhetri epheleleyo
• Indibaniselwano ephezulu ibandakanya zonke ii-MOSFETs, imvakalelo yangoku kunye nembuyekezo ye-loop
• Izatifikethi eziNxulumene noKhuseleko: – I-IEC 62368-1 iSatifikethi se-CB
• Imfonomfono, ithebhulethi
• Imveliso ye-elektroniki, ezonyango, nephathwayo
