BQ25611DRTWR Ulawulo lwebhetri I2C elawulwa 1-cell 3-A buck itshaja yebhetri kunye nokuchongwa USB kunye 1.2-A ukunyusa ukusebenza 24-WQFN -40 ukuya 85
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Texas Instruments |
| Udidi lweMveliso: | Ulawulo lwebhetri |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Uphawu: | Texas Instruments |
| Ukungevani kukufuma: | Ewe |
| Uhlobo lweMveliso: | Ulawulo lwebhetri |
| Ubungakanani bePakethi yoMzi-mveliso: | 3000 |
| Uluhlu olungaphantsi: | I-PMIC - ii-ICs zoLawulo lwaMandla |
♠ I-BQ25611D I2C eLawulwa yi-1-Cell 3.0-A Itshaja yeBattery yeBuck enoFundo lwe-USB kunye ne-1.2-A Boost Operation
I-BQ25611D yinkqubo edibeneyo yokulawula ibhetri ye-3-A yokutshintsha ibhetri kunye nesixhobo sokulawula indlela yamandla kwiseli enye ye-Li-Ion kunye ne-Lipolymer ibhetri. Isisombululo sidityaniswe kakhulu ne-input reverse-blocking FET (RBFET, Q1), i-highside switching FET (HSFET, Q2), i-FET yecala elisezantsi (LSFET, Q3), kunye ne-FET yebhetri (BATFET, Q4) phakathi kwenkqubo kunye nebhetri. Indlela yombane ephantsi yombane iphucula ukusebenza kwemowudi yokutshintsha, inciphisa ixesha lokutshaja ibhetri kwaye yandise ixesha lokuqhuba kwebhetri ngexesha lesigaba sokukhupha.
I-BQ25611D idityaniswe kakhulu i-3-A yolawulo lwentlawulo yebhetri ye-switchmode kunye nenkqubo yokulawula iNdlela yaMandla yesixhobo se-Li-ion kunye ne-Li-polymer ibhetri. Ifaka ukutshaja okukhawulezayo kunye nenkxaso yombane ophezulu wokufakwa kuluhlu olubanzi lwezicelo ezibandakanya ii-smartphones kunye neetafile. Indlela yayo yamandla ephantsi yokuthintela iphucula ukusebenza kwemowudi yokutshintsha, inciphisa ixesha lokutshaja ibhetri, kwaye yandisa ixesha lokubaleka kwebhetri ngexesha lesigaba sokukhupha. Igalelo layo lombane kunye nommiselo wangoku kunye ne-remote sensing yebhetri ihambisa amandla aphezulu okutshaja kwibhetri.
• Ukusebenza okuphezulu, i-1.5-MHz, i-synchronous switchmode buck tshaja
- I-92% yentlawulo esebenzayo kwi-2-A ukusuka kwi-5-V igalelo
– ± 0.4% ukulawulwa kwamandla ombane kunye nenyathelo le-10-mV
– Programmable JEITA imibundu
-Ukuva ibhetri ukude ukutshaja ngokukhawuleza
• Inkxaso ye-USB On-The-Go (OTG) enemveliso ehlengahlengiswayo ukusuka kwi-4.6 V ukuya kwi-5.15 V
-Yandisa isiguquli ukuya kuthi ga kwi-1.2-A imveliso
-I-92% yokunyusa ukusebenza kakuhle kwimveliso ye-1-A
– Umda ochanekileyo oqhubekayo wangoku (CC).
-Isiqalo esithambileyo ukuya kuthi ga kwi-500-µF yomthwalo we-capacitive
• Igalelo elinye elixhasa igalelo le-USB, iadaptha enevoltage ephezulu, okanye amandla angenazingcingo
-Inkxaso ye-4-V ukuya kwi-13.5-V igalelo loluhlu lwamandla ombane kunye ne-22-V eyona nto iphezulu yokulinganisa igalelo
-I-130-ns igalelo lokucima ngokukhawuleza phezu kokhuseleko lombane
-Umda okhoyo wokucwangcisa igalelo (IINDPM) kunye ne-I
I-2C (100-mA ukuya ku-3.2-A, 100-mA/step)
-I-VINDPM threshold ukuya kuthi ga kwi-5.4-V ilandelela ngokuzenzekelayo umbane webhetri kumandla aphezulu
-Zibonele ngokuzenzekelayo i-USB SDP, iCDP, iDCP kunye neeadaptha ezingeyomfuneko
• Ulawulo lwendlela yombane emxinwa yeVDC (NVDC).
-Ukusebenza ngoko nangoko ngaphandle kwebhetri okanye ibhetri ekhutshwe ngokunzulu
• I-RDSON ephantsi 19.5-mΩ BATFET yokunciphisa ilahleko yokutshaja kunye nokwandisa ixesha lokuqhuba kwebhetri
-Ulawulo lwe-BATFET lwemowudi yenqanawa, kunye nenkqubo epheleleyo yokusetha ngokutsha kunye nangaphandle kweadaptha
• 7-µIbhetri ephantsi evuza ngoku kwimo yenqanawa
• 9.5-µIbhetri ephantsi evuzayo ngoku nenkqubo yokulinda
• Iprofayile yokutshaja ibhetri echanekileyo
- ± 6% ummiselo okhoyo ngoku
– ± 7.5% igalelo lommiselo wangoku
– ± 3% umgaqo wombane we-VINDPM
-Ixesha elinocwangciso lokutshaja ibhetri epheleleyo
• Indibaniselwano ephezulu ibandakanya zonke ii-MOSFETs, imvakalelo yangoku kunye nembuyekezo ye-loop
• Izatifikethi eziNxulumene noKhuseleko: – I-IEC 62368-1 iSatifikethi se-CB
• Imfonomfono, ithebhulethi
• Imveliso ye-elektroniki, ezonyango, nephathwayo
