VNS1NV04DPTR-E Gate Abaqhubi OMNIFET AMANDLA MOSFET 40V 1.7 A
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | I-STMicroelectronics |
| Udidi lweMveliso: | Abaqhubi beSango |
| Imveliso: | Abaqhubi beSango le-MOSFET |
| Uhlobo: | Icala eliphantsi |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu / Ityala: | I-SOIC-8 |
| Inani labaqhubi: | 2 Umqhubi |
| Inani leZiphumo: | 2 Isiphumo |
| Imveliso yangoku: | 1.7 A |
| Ubonelelo lweVoltage-Max: | 24 V |
| Ixesha lokunyuka: | 500 ns |
| Ixesha Lokuwa: | 600 ns |
| Ubuncinci bobushushu bokusebenza: | - 40 C |
| Obona bushushu bokusebenza: | + 150 C |
| Uthotho: | VNS1NV04DP-E |
| Isiqinisekiso: | I-AEC-Q100 |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | I-STMicroelectronics |
| Ukungevani kukufuma: | Ewe |
| Ubonelelo oluSebenzayo lwangoku: | 150 uA |
| Uhlobo lweMveliso: | Abaqhubi beSango |
| Ubungakanani bePakethi yoMzi-mveliso: | 2500 |
| Uluhlu olungaphantsi: | I-PMIC - ii-ICs zoLawulo lwaMandla |
| Itekhnoloji: | Si |
| Ubunzima beyunithi: | 0.005291 oz |
♠ I-OMNIFET II ikhuseleke ngokupheleleyo Amandla eMOSFET
I-VNS1NV04DP-E sisixhobo esenziwe ngamacandelo amabini e-monolithic OMNIFET II agcinwe kwiphakheji eqhelekileyo ye-SO-8.I-OMNIFET II iyilwe ngeteknoloji ye-STMicroelectronics VIPower™ M0-3: yenzelwe ukutshintshwa kwee-MosFET zaMandla eziqhelekileyo ukusuka kwi-DC ukuya kwi-50KHz izicelo.Yakhelwe kwi-thermal shutdown, umda okhoyo ngoku kunye ne-clamp overvoltage ikhusela i-chip kwiindawo ezinzima.
Ingxelo ephosakeleyo inokubonwa ngokubeka iliso kwi-voltage kwi-pin yokufaka.
• Unyino lwangoku lomgca
• Ukuvalwa kobushushu
• Ukukhuselwa kwesiphaluka esifutshane
• Ibamba elidibeneyo
• Umsinga osezantsi uzotywe kwi-pin yongeniso
• Ingxelo yokuxilonga nge-input pin
• Ukhuseleko lwe-ESD
• Ukufikelela ngokuthe ngqo kwisango le-mosfet yamandla (ukuqhuba kwe-analog)
• Iyahambelana nemosfet yamandla esemgangathweni
• Ngokuthobela umyalelo we-European 2002/95/EC
