VNL5030JTR-E Gate Abaqhubi OMNIFET III Umqhubi wecala eliphantsi ESD VIPower
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | I-STMicroelectronics |
| Udidi lweMveliso: | Abaqhubi beSango |
| Uthotho: | I-VNL5030J-E |
| Isiqinisekiso: | I-AEC-Q100 |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | I-STMicroelectronics |
| Ukungevani kukufuma: | Ewe |
| Uhlobo lweMveliso: | Abaqhubi beSango |
| Ubungakanani bePakethi yoMzi-mveliso: | 2500 |
| Uluhlu olungaphantsi: | I-PMIC - ii-ICs zoLawulo lwaMandla |
| Itekhnoloji: | Si |
| Ubunzima beyunithi: | 0.004004 oz |
♠ OMNIFET III ekhuselwe ngokupheleleyo umqhubi wecala eliphantsi
I-VNL5030J-E kunye ne-VNL5030S5-E zixhobo ze-monolithic ezenziwe ngokusebenzisa iteknoloji ye-STMicroelectronics® VIPower®, ejoliswe ekuqhubeni imithwalo ye-resistive okanye inductive kunye necala elinye elixhunywe kwibhetri. Ukuvalwa kwe-thermal eyakhelwe-ngaphakathi ikhusela i-chip kwi-overtemperature kunye ne-short-circuit. Unyino lwemveliso lwangoku lukhusela izixhobo kwimeko yokugcwala. Kwimeko yomthwalo ogqithisiweyo wexesha elide, isixhobo sinciphisa amandla achithwayo ukuya kwinqanaba elikhuselekileyo ukuya kungenelelo lokuvalwa kwe-thermal.Ukuvalwa kwe-thermal, ngokuqalisa kwakhona ngokuzenzekelayo, kuvumela isixhobo ukuba sibuyisele ukusebenza okuqhelekileyo ngokukhawuleza ukuba imeko yesiphoso iyanyamalala. Ukususwa kweemagnethi ngokukhawuleza kwemithwalo ye-inductive kufezekiswa xa ucima.
• Izithuthi eziqeqeshiweyo
• Umsinga wamanzi: 25 A
• Ukhuseleko lwe-ESD
• I-Overtage clamp
• Ukuvalwa kobushushu
• Unyino lwangoku kunye namandla
• Umsinga wokulinda osezantsi kakhulu
• Ubuthathaka obuphantsi kakhulu be-electromagnetic
• Ukuthobela imiyalelo yaseYurophu 2002/95/EC
• Vula imveliso yobume bombhobho
