VNB35N07TR-E Ukutshintsha Amandla ICs-Ukusasazwa koMbane OMNIFETII NGOKUZENZAKALELAYO KUKHUSELEKILEYO Pwr MOSFET
♠ Inkcazo yeMveliso
Uphawu lweMveliso | Ixabiso lophawu |
Umenzi: | I-STMicroelectronics |
Udidi lweMveliso: | Ukutshintsha Amandla e-ICs - Ukuhanjiswa kwamandla |
Uhlobo: | Icala Eliphantsi |
Inani leZiphumo: | 1 Isiphumo |
Umda wangoku: | 35 A |
Ekuchaseni - Max: | 28 mmhm |
Ngexesha - Max: | 200 ns |
Ixesha Elingasebenziyo - Ubuninzi: | 1 thina |
Umbane woNikezelo oSebenzayo: | 28V |
Ubuncinci bobushushu bokusebenza: | - 40 C |
Obona bushushu bokusebenza: | + 150 C |
Isimbo sokuNqamisa: | SMD/SMT |
Umqulu / Ityala: | I-D2PAK-3 |
Uthotho: | I-VNB35N07-E |
Isiqinisekiso: | I-AEC-Q100 |
Ukupakishwa: | I-Reel |
Ukupakishwa: | Sika iTape |
Ukupakishwa: | MouseReel |
Uphawu: | I-STMicroelectronics |
Ukungevani kukufuma: | Ewe |
I-Pd - Ukutshatyalaliswa kwamandla: | 125000 mW |
Uhlobo lweMveliso: | Ukutshintsha Amandla e-ICs - Ukuhanjiswa kwamandla |
Ubungakanani bePakethi yoMzi-mveliso: | 1000 |
Uluhlu olungaphantsi: | Tshintshela ii-ICs |
Ubunzima beyunithi: | 0.079014 oz |
♠ I-OMNIFET: i-MOSFET yaMandla ekhuselwe ngokupheleleyo
I-VNP35N07-E, i-VNB35N07-E kunye ne-VNV35N07-E zixhobo ze-monolithic ezenziwe ngokusebenzisa iteknoloji ye-STMicroelectronics VIPower®, ejoliswe ukutshintshwa kwe-MosFET yamandla aqhelekileyo kwi-DC ukuya kwi-50 KHz izicelo.
Ukuvalwa kwe-thermal eyakhelwe-ngaphakathi, umda okhoyo ngoku kunye ne-clamp overvoltage ikhusela i-chip kwiindawo ezinzima.
Ingxelo ephosakeleyo inokubonwa ngokubeka iliso kwi-voltage kwi-pin yokufaka.
• Izithuthi eziqeqeshiweyo
• Unyino lwangoku lomgca
• Ukuvalwa kobushushu
• Ukukhuselwa kwesiphaluka esifutshane
• Ibamba elidibeneyo
• Umsinga osezantsi uzotywe kwi-pin yongeniso
• Ingxelo yokuxilonga nge-input pin
• Ukhuseleko lwe-ESD
• Ukufikelela ngokuthe ngqo kwisango le-Power MOSFET (ukuqhuba kwe-analog)
• Iyahambelana ne-MosFET yaMandla esemgangathweni
• Iphakheji eqhelekileyo ye-TO-220
• Ukuthobela umyalelo we-European 2002/95/EC