SUD50P06-15-GE3 MOSFET 60V 50A 113W 15mohm @ 10V
♠ Inkcazo yeMveliso
Uphawu lweMveliso | Ixabiso lophawu |
Umenzi: | Vishay |
Udidi lweMveliso: | I-MOSFET |
RoHS: | Iinkcukacha |
Itekhnoloji: | Si |
Isimbo sokuNqamisa: | SMD/SMT |
Umqulu/Ityala: | UKUYA-252-3 |
I-Transistor Polarity: | IP-Channel |
Inani lamatshaneli: | Ijelo eli-1 |
I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 60V |
I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 50 A |
I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 15 mohms |
I-Vgs - i-Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - iSango-Umthombo woMbane woMbane: | 3 V |
Qg - Intlawulo yeSango: | 40 nC |
Ubuncinci bobushushu bokusebenza: | - 55 C |
Obona bushushu bokusebenza: | + 150 C |
I-Pd - Ukutshatyalaliswa kwamandla: | 113 W |
Indlela yesitishi: | Uphuculo |
Igama loRhwebo: | TrenchFET |
Ukupakishwa: | I-Reel |
Ukupakishwa: | Sika iTape |
Ukupakishwa: | MouseReel |
Uphawu: | Vishay Semiconductors |
Ubumbeko: | Ungatshatanga |
Ixesha Lokuwa: | 30 ns |
ITransconductance Phambili - Min: | 61 S |
Ubude: | 2.38 mm |
Ubude: | 6.73 mm |
Uhlobo lweMveliso: | I-MOSFET |
Ixesha lokunyuka: | 9ns |
Uthotho: | SUD |
Ubungakanani bePakethi yoMzi-mveliso: | 2000 |
Uluhlu olungaphantsi: | Ii-MOSFETs |
Uhlobo lweTransistor: | I-1 ye-P-Channel |
Ixesha Elilibazisekayo LokuCima: | 65ns |
Ixesha Elilibazisekayo LokuLayita: | 8ns |
Ububanzi: | 6.22 mm |
Inxalenye # Izifakelo: | SUD50P06-15-BE3 |
Ubunzima beyunithi: | 330 mg |
• I-TrenchFET® Power MOSFET
• Ukutshintsha ukulayisha