SUD19P06-60-GE3 MOSFET 60V 19A 38.5W 60mohm @ 10V
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Vishay |
| Udidi lweMveliso: | I-MOSFET |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu / Ityala: | UKUYA-252-3 |
| I-Transistor Polarity: | IP-Channel |
| Inani lamatshaneli: | Ijelo eli-1 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 60V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 50 A |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 60mOhms |
| I-Vgs - i-Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 3 V |
| Qg - Intlawulo yeSango: | 40 nC |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 150 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 113 W |
| Indlela yesitishi: | Uphuculo |
| Igama loRhwebo: | TrenchFET |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | Vishay Semiconductors |
| Ubumbeko: | Ungatshatanga |
| Ixesha Lokuwa: | 30 ns |
| ITransconductance Phambili - Min: | 22 S |
| Uhlobo lweMveliso: | I-MOSFET |
| Ixesha lokunyuka: | 9ns |
| Uthotho: | SUD |
| Ubungakanani bePakethi yoMzi-mveliso: | 2000 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Uhlobo lweTransistor: | I-1 ye-P-Channel |
| Ixesha Elilibazisekayo LokuCima: | 65ns |
| Ixesha Elilibazisekayo LokuLayita: | 8ns |
| Inxalenye # Izifakelo: | SUD19P06-60-BE3 |
| Ubunzima beyunithi: | 0.011640 oz |
• I-Halogen-free Ngokwe-IEC 61249-2-21 Inkcazo
• I-TrenchFET® Power MOSFET
• 100 % UIS ivavanyiwe
• Ukuthobela i-RoHS Directive 2002/95/EC
• Ukutshintsha kwecala eliPhezulu lokuTshintsha iBhulorho epheleleyo
• Isiguquli seDC/DC soMboniso weLCD
