SQM50034EL_GE3 MOSFET N-CHANNEL 60-V (DS) 175C MOSFET
♠ Inkcazo yeMveliso
Uphawu lweMveliso | Ixabiso lophawu |
Umenzi: | Vishay |
Udidi lweMveliso: | I-MOSFET |
RoHS: | Iinkcukacha |
Itekhnoloji: | Si |
Isimbo sokuNqamisa: | SMD/SMT |
Umqulu / Ityala: | UKUYA-263-3 |
I-Transistor Polarity: | N-Channel |
Inani lamatshaneli: | Ijelo eli-1 |
I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 60V |
I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 100 A |
I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 3.2 mOhms |
I-Vgs - i-Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - iSango-Umthombo woMbane woMbane: | 2 V |
Qg - Intlawulo yeSango: | 60 nC |
Ubuncinci bobushushu bokusebenza: | - 55 C |
Obona bushushu bokusebenza: | + 175 C |
I-Pd - Ukutshatyalaliswa kwamandla: | 150 W |
Indlela yesitishi: | Uphuculo |
Igama loRhwebo: | TrenchFET |
Uphawu: | Vishay / Siliconix |
Ubumbeko: | Ungatshatanga |
Ixesha Lokuwa: | 7ns |
Uhlobo lweMveliso: | I-MOSFET |
Ixesha lokunyuka: | 7ns |
Uthotho: | SQ |
Ubungakanani bePakethi yoMzi-mveliso: | 800 |
Uluhlu olungaphantsi: | Ii-MOSFETs |
Ixesha Elilibazisekayo LokuCima: | 33ns |
Ixesha Elilibazisekayo LokuLayita: | 15 ns |
Ubunzima beyunithi: | 0.139332 oz |
• TrenchFET® amandla MOSFET
• Iphakheji enokumelana ne-thermal ephantsi
• 100 % Rg kunye ne-UIS ivavanyiwe
• I-AEC-Q101 ifanelekile