SQJ951EP-T1_GE3 MOSFET Dual P-Channel 30V AEC-Q101 Qualified
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Vishay |
| Udidi lweMveliso: | I-MOSFET |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu / Ityala: | I-PowerPAK-SO-8-4 |
| I-Transistor Polarity: | IP-Channel |
| Inani lamatshaneli: | Ijelo eli-2 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 30 V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 30 A |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 14 mohms |
| I-Vgs - i-Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 2.5 V |
| Qg - Intlawulo yeSango: | 50 nC |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 175 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 56 W |
| Indlela yesitishi: | Uphuculo |
| Isiqinisekiso: | I-AEC-Q101 |
| Igama loRhwebo: | TrenchFET |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | Vishay Semiconductors |
| Ubumbeko: | Zimbini |
| Ixesha Lokuwa: | 28ns |
| Uhlobo lweMveliso: | I-MOSFET |
| Ixesha lokunyuka: | 12 ns |
| Uthotho: | SQ |
| Ubungakanani bePakethi yoMzi-mveliso: | 3000 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Uhlobo lweTransistor: | 2 Ijelo leP |
| Ixesha Elilibazisekayo LokuCima: | 39ns |
| Ixesha Elilibazisekayo LokuLayita: | 12 ns |
| Inxalenye # Izifakelo: | SQJ951EP-T1_BE3 |
| Ubunzima beyunithi: | 0.017870 oz |
• I-Halogen-free Ngokwe-IEC 61249-2-21 Inkcazo
• I-TrenchFET® Power MOSFET
• I-AEC-Q101 iQinisekile
• I-100 % Rg kunye ne-UIS ivavanyiwe
• Ukuthobela i-RoHS Directive 2002/95/EC
