SIA427ADJ-T1-GE3 MOSFET -8V Vds 5V Vgs PowerPAK SC-70
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Vishay |
| Udidi lweMveliso: | I-MOSFET |
| RoHS: | Iinkcukacha |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu/Ityala: | SC-70-6 |
| I-Transistor Polarity: | IP-Channel |
| Inani lamatshaneli: | Ijelo eli-1 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 8V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 12 A |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 95 mmhm |
| I-Vgs - i-Gate-Source Voltage: | - 5 V, + 5 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 800 mV |
| Qg - Intlawulo yeSango: | 50 nC |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 150 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 19 W |
| Indlela yesitishi: | Uphuculo |
| Igama loRhwebo: | TrenchFET |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | Vishay Semiconductors |
| Ubumbeko: | Ungatshatanga |
| Uhlobo lweMveliso: | I-MOSFET |
| Uthotho: | I-SIA |
| Ubungakanani bePakethi yoMzi-mveliso: | 3000 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Ubunzima beyunithi: | 82.330 mg |
• TrenchFET® amandla MOSFET
• Iphakheji ye-PowerPAK® SC-70 eyandisiweyo
-Indawo encinci yeenyawo
– Ukumelana okuphantsi
• I-100 % ivavanyiwe
• Iswitshi yokulayisha, ye-1.2 V yentambo yombane yezixhobo eziphathwayo neziphathwa ngesandla
