SI9945BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Vishay |
| Udidi lweMveliso: | I-MOSFET |
| RoHS: | Iinkcukacha |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu/Ityala: | I-SOIC-8 |
| I-Transistor Polarity: | N-Channel |
| Inani lamatshaneli: | Ijelo eli-2 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 60V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 5.3 A |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 58 mmhm |
| I-Vgs - i-Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 1 V |
| Qg - Intlawulo yeSango: | 13 nC |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 150 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 3.1 W |
| Indlela yesitishi: | Uphuculo |
| Igama loRhwebo: | TrenchFET |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | Vishay Semiconductors |
| Ubumbeko: | Zimbini |
| Ixesha Lokuwa: | 10 ns |
| ITransconductance Phambili - Min: | 15 S |
| Uhlobo lweMveliso: | I-MOSFET |
| Ixesha lokunyuka: | 15 ns, 65 ns |
| Uthotho: | SI9 |
| Ubungakanani bePakethi yoMzi-mveliso: | 2500 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Uhlobo lweTransistor: | 2 N-Channel |
| Ixesha Elilibazisekayo LokuCima: | 10 ns, 15 ns |
| Ixesha Elilibazisekayo LokuLayita: | 15 ns, 20 ns |
| Inxalenye # Izifakelo: | SI9945BDY-GE3 |
| Ubunzima beyunithi: | 750 mg |
• TrenchFET® amandla MOSFET
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