SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Vishay |
| Udidi lweMveliso: | I-MOSFET |
| RoHS: | Iinkcukacha |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu/Ityala: | I-PowerPAK-1212-8 |
| I-Transistor Polarity: | IP-Channel |
| Inani lamatshaneli: | Ijelo eli-1 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 200 V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 3.8 A |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 1.05 Ohms |
| I-Vgs - i-Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 2 V |
| Qg - Intlawulo yeSango: | 25 nC |
| Ubuncinci bobushushu bokusebenza: | - 50 C |
| Obona bushushu bokusebenza: | + 150 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 52 W |
| Indlela yesitishi: | Uphuculo |
| Igama loRhwebo: | TrenchFET |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | Vishay Semiconductors |
| Ubumbeko: | Ungatshatanga |
| Ixesha Lokuwa: | 12 ns |
| ITransconductance Phambili - Min: | 4 S |
| Ubude: | 1.04 mm |
| Ubude: | 3.3 mm |
| Uhlobo lweMveliso: | I-MOSFET |
| Ixesha lokunyuka: | 11 ns |
| Uthotho: | SI7 |
| Ubungakanani bePakethi yoMzi-mveliso: | 3000 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Uhlobo lweTransistor: | I-1 ye-P-Channel |
| Ixesha Elilibazisekayo LokuCima: | 27ns |
| Ixesha Elilibazisekayo LokuLayita: | 9ns |
| Ububanzi: | 3.3 mm |
| Inxalenye # Izifakelo: | SI7119DN-GE3 |
| Ubunzima beyunithi: | 1 g |
• I-Halogen-free Ngokutsho kwe-IEC 61249-2-21 ekhoyo
• I-TrenchFET® Power MOSFET
• Ipakeji ye-PowerPAK® yokuNxhathisa kweThermal ePhantsi enoBukhulu obuNcinci kunye neProfayile ye-1.07 mm ePhantsi
• I-100 % ye-UIS kunye ne-Rg ivavanyiwe
• I-Climp esebenzayo kwi-Intermediate DC/DC Power Supplies
