SI3417DV-T1-GE3 MOSFET 30V Vds 20V Vgs TSOP-6
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Vishay |
| Udidi lweMveliso: | I-MOSFET |
| RoHS: | Iinkcukacha |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu / Ityala: | I-TSOP-6 |
| I-Transistor Polarity: | IP-Channel |
| Inani lamatshaneli: | Ijelo eli-1 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 30 V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 8 A |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 36 mohms |
| I-Vgs - i-Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 3 V |
| Qg - Intlawulo yeSango: | 50 nC |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 150 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 4.2 W |
| Indlela yesitishi: | Uphuculo |
| Igama loRhwebo: | TrenchFET |
| Uthotho: | SI3 |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | Vishay Semiconductors |
| Ubumbeko: | Ungatshatanga |
| Ubude: | 1.1 mm |
| Ubude: | 3.05 mm |
| Uhlobo lweMveliso: | I-MOSFET |
| Ubungakanani bePakethi yoMzi-mveliso: | 3000 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Ububanzi: | 1.65 mm |
| Ubunzima beyunithi: | 0.000705 oz |
• I-TrenchFET® Power MOSFET
• I-100 % Rg kunye ne-UIS ivavanyiwe
• Ukuhlelwa kwezinto:
Ngeenkcazelo zokuthobela nceda ujonge idata.
• Iiswitshi zokulayisha
• Ukutshintsha iadaptha
• Isiguquli seDC/DC
• YeKhompuyutha ehambayo/yeConsumera
