SI2305CDS-T1-GE3 MOSFET -8V Vds 8V Vgs SOT-23
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Vishay |
| Udidi lweMveliso: | I-MOSFET |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu / Ityala: | I-SOT-23-3 |
| I-Transistor Polarity: | IP-Channel |
| Inani lamatshaneli: | Ijelo eli-1 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 8V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 5.8 A |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 35 mohms |
| I-Vgs - i-Gate-Source Voltage: | - 8 V, + 8 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 1 V |
| Qg - Intlawulo yeSango: | 12 nC |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 150 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 1.7 W |
| Indlela yesitishi: | Uphuculo |
| Igama loRhwebo: | TrenchFET |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | Vishay Semiconductors |
| Ubumbeko: | Ungatshatanga |
| Ixesha Lokuwa: | 10 ns |
| Ubude: | 1.45 mm |
| Ubude: | 2.9 mm |
| Uhlobo lweMveliso: | I-MOSFET |
| Ixesha lokunyuka: | 20 ns |
| Uthotho: | SI2 |
| Ubungakanani bePakethi yoMzi-mveliso: | 3000 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Uhlobo lweTransistor: | I-1 ye-P-Channel |
| Ixesha Elilibazisekayo LokuCima: | 40 ns |
| Ixesha Elilibazisekayo LokuLayita: | 20 ns |
| Ububanzi: | 1.6 mm |
| Inxalenye # Izifakelo: | SI2305CDS-T1-BE3 SI2305CDS-GE3 |
| Ubunzima beyunithi: | 0.000282 oz |
• I-Halogen-free Ngokwe-IEC 61249-2-21 Inkcazo
• I-TrenchFET® Power MOSFET
• I-100 % Rg ivavanyiwe
• Ukuthobela i-RoHS Directive 2002/95/EC
• Ukutshintshela ukulayisha kwiZixhobo eziphathwayo
• Isiguquli seDC/DC
