Uhlobo olutsha lwe-hafnium-based ferroelectric memory chip oluphuhliswe kwaye luyilwe ngu-Liu Ming, i-Academician ye-Institute of Microelectronics, luye lwanikezelwa kwi-IEEE International Solid-State Circuits Conference (ISSCC) kwi-2023, inqanaba eliphezulu loyilo oluhlanganisiweyo lwesekethe.
Imemori yokusebenza ephezulu edibeneyo engaguquguqukiyo (eNVM) ikwimfuno ephezulu yeechips zeSOC kubathengi be-elektroniki, izithuthi ezizimeleyo, ulawulo lwamashishini kunye nezixhobo zomda ze-Intanethi yeZinto.Inkumbulo ye-Ferroelectric (FeRAM) ineenzuzo zokuthembeka okuphezulu, ukusetyenziswa kwamandla aphantsi kakhulu, kunye nesantya esiphezulu.Isetyenziswa ngokubanzi kwiimali ezinkulu zokurekhoda idatha ngexesha langempela, ukufundwa rhoqo kwedatha kunye nokubhala, ukusetyenziswa kwamandla aphantsi kunye neemveliso ezifakwe kwi-SoC / SiP.Inkumbulo yeFerroelectric esekelwe kwizinto ze-PZT iphumelele imveliso yobuninzi, kodwa izinto zayo azihambelani nobuchwepheshe be-CMOS kwaye kunzima ukushwabana, okukhokelela kwinkqubo yophuhliso lwememori ye-ferroelectric yendabuko ithintelwe kakhulu, kwaye ukuhlanganiswa okufakwe kuyo kufuna inkxaso yomgca wemveliso eyahlukileyo, kunzima ukuyivakalisa. ngomlinganiselo omkhulu.Ubuncinci bememori entsha esekwe kwi-hafnium ye-ferroelectric kunye nokuhambelana kwayo netekhnoloji ye-CMOS kuyenza ibe yindawo yophando exhalabisayo kwimfundo nakwishishini.Imemori ye-ferroelectric esekwe kwi-Hafnium ithathwa njengesikhokelo sophuhliso esibalulekileyo kwisizukulwana esilandelayo sememori entsha.Okwangoku, uphando lwememori ye-ferroelectric esekwe kwi-hafnium kuseneengxaki ezinjengokungathembeki kweyunithi, ukungabikho koyilo lwe-chip kunye nesekethe ye-peripheral epheleleyo, kunye nokuqinisekiswa okungaphezulu kokusebenza kwinqanaba le-chip, elithintela ukusetyenziswa kwayo kwi-eNVM.
Ijolise kwimingeni ejongene nenkumbulo edibeneyo ye-hafnium-based ferroelectric, iqela le-Academician Liu Ming elivela kwiZiko leMicroelectronics lenze kwaye lasebenzisa i-megab-magnitude ye-FeRAM yovavanyo lwechip okokuqala kwihlabathi ngokusekelwe kwiqonga lokudibanisa elikhulu. yememori ye-hafnium esekwe kwi-ferroelectric ehambelana ne-CMOS, kwaye igqibe ngempumelelo udibaniso olukhulu lwe-HZO ferroelectric capacitor kwinkqubo ye-130nm ye-CMOS.I-ECC-incediswe ukubhala isekethe yokubhala ubushushu kunye nesekethe ye-amplifier enovakalelo yokupheliswa kwe-offset ngokuzenzekelayo iyacetywa, kwaye ukuqina komjikelo we-1012 kunye ne-7ns yokubhala kunye nexesha lokufunda le-5ns liphunyeziwe, ngamanqanaba angcono axelwe ngoku.
Iphepha elithi "I-9-Mb HZO-based Embedded FeRAM kunye ne-1012-Cycle Endurance kunye ne-5 / 7ns Funda / Bhala usebenzisa i-ECC-Assisted Data Refresh" isekelwe kwiziphumo kunye ne-Offset-Canceled Sense Amplifier "yakhethwa kwi-ISSCC 2023, kwaye itshiphu yakhethwa kwiSeshini yeDemo ye-ISSCC eza kuboniswa kwinkomfa.UYang Jianguo ngumbhali wokuqala wephepha, kwaye uLiu Ming ngumbhali ohambelanayo.
Umsebenzi onxulumeneyo uxhaswa yiSiseko seSizwe seSayensi yeNdalo yaseChina, iNkqubo yoPhando oluPhambili lweSizwe kunye neNkqubo yoPhuhliso yeSebe lezeNzululwazi kunye neTekhnoloji, kunye neProjekthi ye-B-Class Pilot ye-Chinese Academy of Sciences.
(Ifoto ye-9Mb Hafnium-based FeRAM chip kunye novavanyo lokusebenza lwechip)
Ixesha lokuposa: Apr-15-2023