Uhlobo olutsha lwe-hafnium-based ferroelectric memory chip oluphuhliswe kwaye luyilwe ngu-Liu Ming, i-Academician ye-Institute of Microelectronics, luye lwanikezelwa kwi-IEEE International Solid-State Circuits Conference (ISSCC) kwi-2023, inqanaba eliphezulu loyilo oluhlanganisiweyo lwesekethe.
Imemori yokusebenza ephezulu edibeneyo engaguquguqukiyo (eNVM) ikwimfuno ephezulu yeechips zeSOC kubathengi be-elektroniki, izithuthi ezizimeleyo, ulawulo lwamashishini kunye nezixhobo zomda ze-Intanethi yeZinto. Inkumbulo ye-Ferroelectric (FeRAM) ineenzuzo zokuthembeka okuphezulu, ukusetyenziswa kwamandla aphantsi kakhulu, kunye nesantya esiphezulu. Isetyenziswa ngokubanzi kwiimali ezinkulu zokurekhoda idatha ngexesha langempela, ukufundwa rhoqo kwedatha kunye nokubhala, ukusetyenziswa kwamandla aphantsi kunye neemveliso ezifakwe kwi-SoC / SiP. inkumbulo Ferroelectric esekelwe PZT imveliso iphumelele imveliso yobuninzi, kodwa izinto zayo ayihambelani nobuchwepheshe CMOS kwaye kunzima ukushwabana, ekhokelela kwinkqubo yophuhliso lwenkumbulo yemveli ferroelectric sithintelwe ngokunzulu, kwaye ukuhlanganiswa embekelweyo ifuna inkxaso umgca wemveliso eyahlukileyo, kunzima ukuba popularize kumlinganiselo omkhulu. Ubuncinci bememori entsha esekwe kwi-hafnium ye-ferroelectric kunye nokuhambelana kwayo netekhnoloji ye-CMOS kuyenza ibe yindawo yophando exhalabisayo kwimfundo nakwishishini. Imemori ye-ferroelectric esekwe kwi-Hafnium ithathwa njengesikhokelo sophuhliso esibalulekileyo kwisizukulwana esilandelayo sememori entsha. Okwangoku, uphando lwememori ye-ferroelectric esekwe kwi-hafnium kuseneengxaki ezinjengokungathembeki kweyunithi, ukungabikho koyilo lwe-chip kunye nesekethe ye-peripheral epheleleyo, kunye nokuqinisekiswa okungaphezulu kokusebenza kwinqanaba le-chip, elithintela ukusetyenziswa kwayo kwi-eNVM.
Ijolise kwimingeni ejongene nenkumbulo edibeneyo ye-hafnium-based ferroelectric, iqela le-Academician Liu Ming elivela kwiZiko leMicroelectronics lenze kwaye lasebenzisa i-megab-magnitude ye-FeRAM yokuvavanya okokuqala ngqa emhlabeni ngokusekelwe kwiqonga elikhulu lokudibanisa imemori ye-hafnium-based ferroelectric memory, ehambelana ngempumelelo ne-HMOS. capacitor kwinkqubo ye-130nm CMOS. Isekethe ye-ECC encediswayo yokubhala i-drive yokuvavanya ubushushu kunye nesekethe ye-amplifier ebuthathaka yokupheliswa kwe-offset ngokuzenzekelayo iyacetywa, kunye nokuqina komjikelo we-1012 kunye ne-7ns yokubhala kunye nexesha lokufunda le-5ns liphunyeziwe, ngamanqanaba angcono axelwe ngoku.
Iphepha elithi "I-9-Mb HZO-based Embedded FeRAM kunye ne-1012-Cycle Endurance kunye ne-5 / 7ns Funda / Bhala usebenzisa i-ECC-Assisted Data Refresh" isekelwe kwiziphumo kunye ne-Offset-Canceled Sense Amplifier "yakhethwa kwi-ISSCC 2023, kwaye i-chip yakhethwa kwi-ISSCC kwinkomfa ye-Demo yokuqala. umbhali wephepha, kwaye uLiu Ming ngumbhali ohambelanayo.
Umsebenzi onxulumeneyo uxhaswa yiSiseko seSizwe seSayensi yeNdalo yaseChina, iNkqubo yoPhando oluPhambili lweSizwe kunye neNkqubo yoPhuhliso yeSebe lezeNzululwazi kunye neTekhnoloji, kunye neProjekthi ye-B-Class Pilot ye-Chinese Academy of Sciences.
(Ifoto ye-9Mb Hafnium-based FeRAM chip kunye novavanyo lokusebenza lwechip)
Ixesha lokuposa: Apr-15-2023
