I-MMBT3904TT1G i-Bipolar Transistors – BJT 200mA 40V NPN
♠ Inkcazo yeMveliso
Uphawu lweMveliso | Ixabiso lophawu |
Umenzi: | bonke |
Udidi lweMveliso: | Ii-Bipolar Transistors-BJT |
RoHS: | Iinkcukacha |
Isimbo sokuNqamisa: | SMD/SMT |
Umqulu / Ityala: | SC-75-3 |
I-Transistor Polarity: | NPN |
Ubumbeko: | Ungatshatanga |
Umqokeleli- Emitter Voltage VCEO Max: | 40 V |
Umqokeleli- Isiseko seVoltage VCBO: | 60V |
Emitter- Base Voltage VEBO: | 6 V |
Umqokeleli-Emitter Saturation Voltage: | 300 mV |
Oyena Mqokeleli we-DC wangoku: | 200 mA |
I-Pd - Ukutshatyalaliswa kwamandla: | 225 mW |
Fumana iMveliso yoBandwidth fT: | 300 MHz |
Ubuncinci bobushushu bokusebenza: | - 55 C |
Obona bushushu bokusebenza: | + 150 C |
Uthotho: | I-MMBT3904T |
Ukupakishwa: | I-Reel |
Ukupakishwa: | Sika iTape |
Ukupakishwa: | MouseReel |
Uphawu: | bonke |
UMqokeleli oqhubekayo wangoku: | 0.2 A |
DC Umqokeleli/Base Gain hfe Min: | 40 |
Ubude: | 0.75 mm |
Ubude: | 1.6 mm |
Uhlobo lweMveliso: | Ii-BJTs - ii-Bipolar Transistors |
Ubungakanani bePakethi yoMzi-mveliso: | 3000 |
Uluhlu olungaphantsi: | Iitransistor |
Itekhnoloji: | Si |
Ububanzi: | 0.8 mm |
Ubunzima beyunithi: | 0.000089 oz |
• Isimaphambili se-S seZithuthi kunye nezinye ii-aplikeshini ezifuna iSiza esahlukileyo kunye neeMfuno zoTshintsho loLawulo;I-AEC−Q101 Efanelekileyo kunye ne-PPAP ekwaziyo
• Ezi zixhobo azinaPb−Zimahala, iHalogen aziMahla/BFR zisimahla kwaye ziyahambelana neRoHS*