I-MBT3904DW1T1G i-Bipolar Transistors – BJT 200mA 60V Dual NPN

Inkcazelo emfutshane:

Abavelisi: KWISemiconductor

Udidi lweeMveliso: IiTransistors – Bipolar (BJT) – Arrays

Ishiti yedatha:MBT3904DW1T1G

Inkcazo: TRANS 2NPN 40V 0.2A SC88

Ubume be-RoHS: Iyahambelana ne-RoHS


Iinkcukacha zeMveliso

Iimbonakalo

Iithegi zeMveliso

♠ Inkcazo yeMveliso

Uphawu lweMveliso Ixabiso lophawu
Umenzi: bonke
Udidi lweMveliso: Ii-Bipolar Transistors-BJT
RoHS: Iinkcukacha
Isimbo sokuNqamisa: SMD/SMT
Umqulu / Ityala: SC-70-6
I-Transistor Polarity: NPN
Ubumbeko: Zimbini
Umqokeleli- Emitter Voltage VCEO Max: 40 V
Umqokeleli- Isiseko seVoltage VCBO: 60V
Emitter- Base Voltage VEBO: 6 V
Umqokeleli-Emitter Saturation Voltage: 300 mV
Oyena Mqokeleli we-DC wangoku: 200 mA
I-Pd - Ukutshatyalaliswa kwamandla: 150 mW
Fumana iMveliso yoBandwidth fT: 300 MHz
Ubuncinci bobushushu bokusebenza: - 55 C
Obona bushushu bokusebenza: + 150 C
Uthotho: MBT3904DW1
Ukupakishwa: I-Reel
Ukupakishwa: Sika iTape
Ukupakishwa: MouseReel
Uphawu: bonke
UMqokeleli oqhubekayo wangoku: - 2 A
DC Umqokeleli/Base Gain hfe Min: 40
Ubude: 0.9 mm
Ubude: 2 mm
Uhlobo lweMveliso: Ii-BJTs - ii-Bipolar Transistors
Ubungakanani bePakethi yoMzi-mveliso: 3000
Uluhlu olungaphantsi: Iitransistor
Itekhnoloji: Si
Ububanzi: 1.25 mm
Inxalenye # Izifakelo: MBT3904DW1T3G
Ubunzima beyunithi: 0.000988 oz

  • Ngaphambili:
  • Okulandelayo:

  • • hFE, 100−300 • I-VCE ephantsi(yahlala), ≤ 0.4 V

    • Yenza lula uYilo lweSekethe

    • Ukunciphisa isithuba seBhodi

    • Ucutha uBalo lwaMacandelo

    • Ifumaneka nge-8 mm, 7−inch/3,000 Unit Tape kunye neReel

    • I-S kunye ne-NSV Prefix ye-Automotive kunye nezinye ii-aplikeshini ezifuna iSiza esahlukileyo kunye noLawulo lweeMfuno zoTshintsho;I-AEC−Q101 Efanelekileyo kunye ne-PPAP ekwaziyo

    • Ezi zixhobo zi-Pb−Zimahala, iHalogen aziMahla/BFR zisimahla kwaye ziyahambelana neRoHS.

    Iimveliso ezinxulumeneyo