I-MBT3904DW1T1G i-Bipolar Transistors – BJT 200mA 60V Dual NPN
♠ Inkcazo yeMveliso
Uphawu lweMveliso | Ixabiso lophawu |
Umenzi: | bonke |
Udidi lweMveliso: | Ii-Bipolar Transistors-BJT |
RoHS: | Iinkcukacha |
Isimbo sokuNqamisa: | SMD/SMT |
Umqulu / Ityala: | SC-70-6 |
I-Transistor Polarity: | NPN |
Ubumbeko: | Zimbini |
Umqokeleli- Emitter Voltage VCEO Max: | 40 V |
Umqokeleli- Isiseko seVoltage VCBO: | 60V |
Emitter- Base Voltage VEBO: | 6 V |
Umqokeleli-Emitter Saturation Voltage: | 300 mV |
Oyena Mqokeleli we-DC wangoku: | 200 mA |
I-Pd - Ukutshatyalaliswa kwamandla: | 150 mW |
Fumana iMveliso yoBandwidth fT: | 300 MHz |
Ubuncinci bobushushu bokusebenza: | - 55 C |
Obona bushushu bokusebenza: | + 150 C |
Uthotho: | MBT3904DW1 |
Ukupakishwa: | I-Reel |
Ukupakishwa: | Sika iTape |
Ukupakishwa: | MouseReel |
Uphawu: | bonke |
UMqokeleli oqhubekayo wangoku: | - 2 A |
DC Umqokeleli/Base Gain hfe Min: | 40 |
Ubude: | 0.9 mm |
Ubude: | 2 mm |
Uhlobo lweMveliso: | Ii-BJTs - ii-Bipolar Transistors |
Ubungakanani bePakethi yoMzi-mveliso: | 3000 |
Uluhlu olungaphantsi: | Iitransistor |
Itekhnoloji: | Si |
Ububanzi: | 1.25 mm |
Inxalenye # Izifakelo: | MBT3904DW1T3G |
Ubunzima beyunithi: | 0.000988 oz |
• hFE, 100−300 • I-VCE ephantsi(yahlala), ≤ 0.4 V
• Yenza lula uYilo lweSekethe
• Ukunciphisa isithuba seBhodi
• Ucutha uBalo lwaMacandelo
• Ifumaneka nge-8 mm, 7−inch/3,000 Unit Tape kunye neReel
• I-S kunye ne-NSV Prefix ye-Automotive kunye nezinye ii-aplikeshini ezifuna iSiza esahlukileyo kunye noLawulo lweeMfuno zoTshintsho;I-AEC−Q101 Efanelekileyo kunye ne-PPAP ekwaziyo
• Ezi zixhobo zi-Pb−Zimahala, iHalogen aziMahla/BFR zisimahla kwaye ziyahambelana neRoHS.