I-IKW50N65ES5XKSA1 I-IGBT Transistors INDUSTRY 14
♠ Inkcazo yeMveliso
Uphawu lweMveliso | Ixabiso lophawu |
Umenzi: | Infineon |
Udidi lweMveliso: | IGBT Transistors |
Itekhnoloji: | Si |
Umqulu / Ityala: | UKUYA-247-3 |
Isimbo sokuNqamisa: | NgeHole |
Ubumbeko: | Ungatshatanga |
Umqokeleli- Emitter Voltage VCEO Max: | 650 V |
Umqokeleli-Emitter Saturation Voltage: | 1.35 V |
Ubuninzi beSango leEmitter Voltage: | 20 V |
UMqokeleli oqhubekayo ngoku kwi-25 C: | 80 A |
I-Pd - Ukutshatyalaliswa kwamandla: | 274 W |
Ubuncinci bobushushu bokusebenza: | - 40 C |
Obona bushushu bokusebenza: | + 175 C |
Uthotho: | I-TRENCHSTOP 5 S5 |
Ukupakishwa: | Umbhobho |
Uphawu: | I-Infineon Technologies |
I-Gate-Emitter Leakage yangoku: | 100 nA |
Ubude: | 20.7 mm |
Ubude: | 15.87 mm |
Uhlobo lweMveliso: | IGBT Transistors |
Ubungakanani bePakethi yoMzi-mveliso: | 240 |
Uluhlu olungaphantsi: | Ii-IGBTs |
Igama loRhwebo: | I-TRENCHSTOP |
Ububanzi: | 5.31 mm |
Inxalenye # Izifakelo: | IKW50N65ES5 SP001319682 |
Ubunzima beyunithi: | 0.213537 oz |
I-HighspeedS5technology offer
•Highspeedsmoothswitchingdeviceforhard&softswitching
•KakhuluLowVCEsat,1.35Vatnominalcurrent
•I-Plugandplay endaweni yee-GBT zesizukulwana sangaphambili
•650Vbreakdownvoltage
•Intlawulo ephantsiQG
•IGBTcopacked withfullratedRAPID1fastantiparalleldiode
Obona bushushu buphezulu175°C
•Ifanelekile ngokweJEDECfortargetapplications
•Pb-freeleadplating;I-RoHS iyahambelana
•Iimodeli zeproductrumandPSpiceModels ezigqibeleleyo: http://www.infineon.com/igbt/
•Resonantconverters
•Amandla angenakuphazamiseka
•IiWeldingconverters
•Midtohighrangeswitchingfrequencyconverters