IDW30G120C5BFKSA1 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Infineon |
| Udidi lweMveliso: | Schottky Diodes & Rectifiers |
| RoHS: | Iinkcukacha |
| Imveliso: | Schottky Silicon Carbide Diode |
| Isimbo sokuNqamisa: | NgeHole |
| Umqulu / Ityala: | UKUYA-247-3 |
| Ubumbeko: | Dual Anode Common Cathode |
| Itekhnoloji: | SiC |
| Ukuba - Dlulisa Ngoku: | 30 A |
| I-Vrrm-Umbane oPhindayo uBuywa umva: | 1.2 kV |
| I-Vf-I-Voltge ePhambili: | 1.4 V |
| Ifsm - Dlulisela phambili iSurge yangoku: | 240 A |
| Ir - Buyela umva yangoku: | 17A |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 175 C |
| Uthotho: | IDW30G120C5 |
| Ukupakishwa: | Umbhobho |
| Uphawu: | I-Infineon Technologies |
| I-Pd - Ukutshatyalaliswa kwamandla: | 332 W |
| Uhlobo lweMveliso: | Schottky Diodes & Rectifiers |
| Ubungakanani bePakethi yoMzi-mveliso: | 240 |
| Uluhlu olungaphantsi: | IiDiodes & Rectifiers |
| Igama loRhwebo: | CoolSiC |
| I-Vr-Reverse Voltage: | 1.2 kV |
| Inxalenye # Izifakelo: | IDW30G120C5B SP001123716 |
| Ubunzima beyunithi: | 1.340411 oz |
·Imathiriyeli yenguqu ye-semiconductor-Silicon Carbide
·Akukho kubuyisela umva ngoku / Akukho kubuyisela phambili
·Ubushushu obuzimeleyo bokutshintsha ukuziphatha
·Amandla ombane asezantsi asezantsi nakwiqondo lobushushu eliphezulu lokusebenza
·Ukusasazwa kwamandla ombane ukuya phambili
·Ukusebenza kakuhle kwe-thermal
·Ukwandiswa kwamandla okusebenza ngoku
·Ubugwenxa bedv/dt obucacisiweyo
·Ufanelekile ngokweJEDEC1) kwizicelo ekujoliswe kuzo
·iPb-free lead plating;RoHS iyahambelana
·Iziguquli zelanga
·Unikezelo lwamandla olungaphazamisekiyo
·Iimoto ziqhuba
·Ukulungiswa kwezinto zamandla
