Iinkcukacha zeMveliso
Iithegi zeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | bonke |
| Udidi lweMveliso: | I-MOSFET |
| RoHS: | Iinkcukacha |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu / Ityala: | I-DPAK-3 |
| I-Transistor Polarity: | N-Channel |
| Inani lamatshaneli: | Ijelo eli-1 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 600 V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 1.7 A |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 1.9 Ohms |
| I-Vgs - i-Gate-Source Voltage: | - 25 V, + 25 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 5 V |
| Qg - Intlawulo yeSango: | 8.3 nC |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 150 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 114 W |
| Indlela yesitishi: | Uphuculo |
| Igama loRhwebo: | I-UniFET |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | ukuqala / Fairchild |
| Ubumbeko: | Ungatshatanga |
| Ixesha Lokuwa: | 12.8 ns |
| ITransconductance Phambili - Min: | 3.4 S |
| Ubude: | 2.39 mm |
| Ubude: | 6.73 mm |
| Imveliso: | I-MOSFET |
| Uhlobo lweMveliso: | I-MOSFET |
| Ixesha lokunyuka: | 15.1 ns |
| Uthotho: | FDD4N60NZ |
| Ubungakanani bePakethi yoMzi-mveliso: | 2500 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Uhlobo lweTransistor: | I-1 N-Channel |
| Ixesha Elilibazisekayo LokuCima: | 30.2 ns |
| Ixesha Elilibazisekayo LokuLayita: | 12.7 ns |
| Ububanzi: | 6.22 mm |
| Ubunzima beyunithi: | 0.011640 oz |
Ngaphambili: Izalathisi ze-NCP431BVSNT1G Voltage ANA 2.5V PROG SHUNT REF Okulandelayo: I-NCV8402ASTT1G MOSFET 42V 2.0A
