CSD88537ND MOSFET 60-V Dual N-Channel Power MOSFET
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | Texas Instruments |
| Udidi lweMveliso: | I-MOSFET |
| RoHS: | Iinkcukacha |
| Itekhnoloji: | Si |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu/Ityala: | I-SOIC-8 |
| I-Transistor Polarity: | N-Channel |
| Inani lamatshaneli: | Ijelo eli-2 |
| I-Vds-Imithombo yoLwahlulo loMbane loMbhobho: | 60V |
| I-ID - Ukutsalwa ngokuqhubekayo kwangoku: | 16 A |
| I-Rds ivuliwe - ukuchasana nomthombo wokukhutshwa kwamanzi: | 15 mohms |
| I-Vgs - i-Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - iSango-Umthombo woMbane woMbane: | 2.6 V |
| Qg - Intlawulo yeSango: | 14 nC |
| Ubuncinci bobushushu bokusebenza: | - 55 C |
| Obona bushushu bokusebenza: | + 150 C |
| I-Pd - Ukutshatyalaliswa kwamandla: | 2.1 W |
| Indlela yesitishi: | Uphuculo |
| Igama loRhwebo: | I-NexFET |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | Texas Instruments |
| Ubumbeko: | Zimbini |
| Ixesha Lokuwa: | 19 ns |
| Ubude: | 1.75 mm |
| Ubude: | 4.9 mm |
| Uhlobo lweMveliso: | I-MOSFET |
| Ixesha lokunyuka: | 15 ns |
| Uthotho: | CSD88537ND |
| Ubungakanani bePakethi yoMzi-mveliso: | 2500 |
| Uluhlu olungaphantsi: | Ii-MOSFETs |
| Uhlobo lweTransistor: | 2 N-Channel |
| Ixesha Elilibazisekayo LokuCima: | 5 ns |
| Ixesha Elilibazisekayo LokuLayita: | 6ns |
| Ububanzi: | 3.9 mm |
| Ubunzima beyunithi: | 74 mg |
♠ CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET
Le mbini ye-SO-8, 60 V, 12.5 mΩ NexFET™ amandla eMOSFET yenzelwe ukusebenza njengebhulorho enesiqingatha kwizicelo zolawulo lweemoto ezisezantsi.
• I-Ultra-Low Qg kunye ne-Qgd
• I-Avalanche Rated
• Pb Mahala
• Ukuthobela iRoHS
• IHalogen yasimahla
• IHalf Bridge yoLawulo lweeMoto
• Isiguquli seBuck esilungelelanisiweyo
