I-2SC5964-TD-H i-Bipolar Transistors-BJT BIP NPN 3A 50V
♠ Inkcazo yeMveliso
| Uphawu lweMveliso | Ixabiso lophawu |
| Umenzi: | bonke |
| Udidi lweMveliso: | Ii-Bipolar Transistors-BJT |
| Isimbo sokuNqamisa: | SMD/SMT |
| Umqulu / Ityala: | I-SOT-89-3 |
| I-Transistor Polarity: | NPN |
| Ubumbeko: | Ungatshatanga |
| Umqokeleli- Emitter Voltage VCEO Max: | 50 V |
| Umqokeleli- Isiseko seVoltage VCBO: | 100 V |
| Emitter- Base Voltage VEBO: | 6 V |
| Umqokeleli-Emitter Saturation Voltage: | 100 mV |
| Oyena Mqokeleli we-DC wangoku: | 3 A |
| I-Pd - Ukutshatyalaliswa kwamandla: | 3.5 W |
| Fumana iMveliso yoBandwidth fT: | 380 MHz |
| Ubuncinci bobushushu bokusebenza: | - |
| Obona bushushu bokusebenza: | + 150 C |
| Uthotho: | 2SC5964 |
| Ukupakishwa: | I-Reel |
| Ukupakishwa: | Sika iTape |
| Ukupakishwa: | MouseReel |
| Uphawu: | bonke |
| UMqokeleli oqhubekayo wangoku: | 3 A |
| DC Umqokeleli/Base Gain hfe Min: | 200 |
| Uhlobo lweMveliso: | Ii-BJTs - ii-Bipolar Transistors |
| Ubungakanani bePakethi yoMzi-mveliso: | 1000 |
| Uluhlu olungaphantsi: | Iitransistor |
| Itekhnoloji: | Si |
| Ubunzima beyunithi: | 0.004603 oz |
• Ukwamkelwa kwenkqubo ye-MBIT
• Umqokeleli ophantsi we-emitter saturation voltage
• Ukuthotyelwa kweHalogen simahla
• Umthamo omkhulu wangoku
• Ukutshintsha ngesantya esiphezulu
•Isiguquli se-DC/DC, abaqhubi be-relay, abaqhubi besibane, umqhubi wemoto, iflash
